Samsung Electronics, the world leader in
advanced memory technology, today
announced that it has begun mass production
of the industry’s first 512-gigabyte (GB)
embedded Universal Flash Storage (eUFS)
solution for use in next-generation mobile
devices. Utilizing Samsung’s latest 64-layer
512-gigabit (Gb) V-NAND chips, the new
512GB eUFS package provides unparalleled
storage capacity and outstanding performance
for upcoming flagship smartphones and
tablets.
“The new Samsung 512GB eUFS provides the
best embedded storage solution for next-
generation premium smartphones by
overcoming potential limitations in system
performance that can occur with the use of
micro SD cards, said Jaesoo Han, executive
vice president of Memory Sales & Marketing at
Samsung Electronics. “By assuring an early,
stable supply of this advanced embedded
storage, Samsung is taking a big step forward
in contributing to timely launches of next-
generation mobile devices by mobile
manufacturers around the world.”
Consisting of eight 64-layer 512Gb V-NAND
chips and a controller chip, all stacked
together, Samsung’s new 512GB UFS doubles
the density of Samsung’s previous 48-layer V-
NAND-based 256GB eUFS, in the same
amount of space as the 256GB package. The
eUFS’ increased storage capacity will provide
a much more extensive mobile experience. For
example, the new high-capacity eUFS enables
a flagship smartphone to store approximately
130 4K Ultra HD (3840×2160) video clips of a
10-minute duration*, which is about a tenfold
increase over a 64GB eUFS which allows
storing only about 13 of the same-sized video
clips.
To maximize the performance and energy
efficiency of the new 512GB eUFS, Samsung
has introduced a new set of proprietary
technologies. The 64-layer 512Gb V-NAND’s
advanced circuit design and new power
management technology in the 512GB eUFS’
controller minimize the inevitable increase in
energy consumed, which is particularly
noteworthy since the new 512GB eUFS
solution contains twice the number of cells
compared to a 256GB eUFS. In addition, the
512GB eUFS’ controller chip speeds up the
mapping process for converting logical block
addresses to those of physical blocks.
The Samsung 512GB eUFS also features
strong read and write performance. With its
sequential read and writes reaching up to 860
megabytes per second (MB/s) and 255MB/s
respectively, the 512GB embedded memory
enables transferring a 5GB-equivalent full HD
video clip to an SSD in about six seconds,
over eight times faster than a typical microSD
card.
For random operations, the new eUFS can read
42,000 IOPS and write 40,000 IOPS. Based on
the eUFS’ rapid random writes, which are
approximately 400 times faster than the100
IOPS speed of a conventional microSD card,
mobile users can enjoy seamless multimedia
experiences such as high-resolution burst
shooting, as well as file searching and video
downloading in dual-app viewing mode.
On a related note, Samsung intends to steadily
increase an aggressive production volume for
its 64-layer 512Gb V-NAND chips, in addition
to expanding its 256Gb V-NAND production.
This should meet the increase in demand for
advanced embedded mobile storage, as well as
for premium SSDs and removable memory
cards with high density and performance.